A 286 mm² 256 Mb DRAM with ×32 both-ends DQ

Abstract

This paper describes a 256 Mb DRAM chip architecture which provides up to ×32 wide organization. In order to minimize the die size, three new techniques: an exchangeable hierarchical data line structure, an irregular sense amp layout, and a split address bus with local redrive scheme in the both-ends DQ were introduced. A chip has been developed based on the architecture with 0.25 μm CMOS technology. The chip measures 13.25 mm × 21.55 mm, which is the smallest 256 Mb DRAM ever reported. A row address strobe (RAS) access time of 26 ns was obtained under 2.8 V power supply and 85 °C. In addition, a 100 MHz ×32 page mode operation, namely 400 M byte/s data rate, in the standard extended data output (EDO) cycle has been successfully demonstrated. © 1996 IEEE.