VLSI Technology 1999
Conference paper

0.18 μm high-performance logic technology


In this paper, we describe a high-performance 0.18 μm logic technology with dual damascene copper metallization and dense SRAM memory. Local interconnect technology allows us to fabricate SRAM cells as small as 3.84 μm2. We demonstrate that copper metallization continues to exhibit performance advantages over aluminum-based technologies in this generation.