IVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
- S.L. Wright
- M.B. Rothwell
- et al.
- 1993
- IEEE Transactions on Electron Devices
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136 results at IEEE Transactions on Electron Devices
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
The Effect of Trench Corner Shapes on Local Stress Fields : A Three-Dimensional Finite-Element Modeling Study
- Scott R. Stiffler
- Arturo O. Cifuentes
- 1993
- IEEE Transactions on Electron Devices
VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- IEEE Transactions on Electron Devices