IIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- IEEE Transactions on Electron Devices
Publications
136 results at IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices