Conference paperAn n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regionsG.M. Cohen, P. Solomon, et al.DRC 2007
Conference paperVoltage and temperature dependence of random telegraph noise in highly scaled HKMG ETSOI nFETs and its impact on logic delay uncertaintyH. Miki, M. Yamaoka, et al.VLSI Technology 2012
Conference paperAggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyondD. Fried, J. Hergenrother, et al.IEDM 2004
