IEEE Transactions on Electron Devices

Paper

01 Jan 1993

IVA-5 Base Recombination in High Performance InGaAs/InP HBT's

View publication

Abstract

No abstract available.

Paper

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

R.C. Gee, C.L. Lin, et al.

Electronics Letters

Conference paper

Base recombination in high performance InGaAs/InP HBTs

C.W. Seabury, C.W. Farley, et al.

Device Research Conference 1993

Paper

Recent progress in atomic layer epitaxy of III-V compounds

S.M. Bedair, B.T. McDermott, et al.

Journal of Crystal Growth

Paper

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

R.C. Gee, C.L. Lin, et al.

Electronics Letters

View all publications