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PaperA 70-GHz fT low operating bias self-aligned p-type SiGe MODFETM. Arafa, K. Ismail, et al.IEEE Electron Device Letters
PaperAn MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gateS. Rishton, K. Ismail, et al.Microelectronic Engineering
PaperIdentification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructuresK. Ismail, F. Legoues, et al.Physical Review Letters
