Temperature, electric field, and doping dependent mobilities of electrons and holes in semiconductors
- S. Noor Mohammad
- Andrew V. Bemis
- et al.
- 1993
- Solid State Electronics
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42 results at Solid State Electronics
"Universal" effective mobility of empirical local mobility models for n- and p-channel silicon MOSFETs
- Hon-Sum Wong
- 1993
- Solid State Electronics
Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
- A. Acovic
- C.C.-H. Hsu
- et al.
- 1993
- Solid State Electronics
Low temperature Rdb measurements and simulations for Si npn transistors
- P.T. Nguyen
- S.S. Yao
- et al.
- 1993
- Solid State Electronics
Unified model for drift velocities of electrons and holes in semiconductors as a function of temperature and electric field
- S.Noor Mohammad
- 1992
- Solid State Electronics
A new approach to the modeling of pnpn structures
- Christian Schmeiser
- Herbert Steinrück
- 1991
- Solid State Electronics
Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon
- M.O. Aboelfotoh
- 1991
- Solid State Electronics
GaAs surface plasma treatments for Schottky contacts
- A. Paccagnella
- A.C. Callegari
- 1991
- Solid State Electronics
Response to "Comments on the paper 'Coupling capacitances in VLSI Circuits calculated by multi-dimensional discrete fourier-series'"
- F.S. Lai
- 1991
- Solid State Electronics
Charge trapping and retention in ultra-thin oxide-nitride-oxide structures
- P. Olivo
- Z.A. Weinberg
- et al.
- 1991
- Solid State Electronics