Temperature, electric field, and doping dependent mobilities of electrons and holes in semiconductors

Abstract

A new formula for electron and hole mobilities in semiconductors is presented. Although empirical, it is accurate and widely applicable to a number of semiconductors, such as Si, Ge, GaAs, InP, etc. The formula is simple, and yet predicts temperature and field dependence of electron and hole mobilities very well. To our knowledge, the present model is more general than any other model (both empirical and theoretical) available in the literature. Because of very simplistic nature, it promises to be highly useful for analytically modeling the current-voltage characteristics of transistors. © 1993.