Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers
- H.P. Meier
- E. Van Gieson
- et al.
- 1989
- Journal of Crystal Growth
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166 results at Journal of Crystal Growth
Influence of surface morphology upon recovery kinetics during interrupted epitaxial growth
- S. Clarke
- D.D. Vvedensky
- et al.
- 1989
- Journal of Crystal Growth
One- and zero-dimensional systems: Fabrication and characterization
- J.M. Hong
- T.P. Smith III
- et al.
- 1989
- Journal of Crystal Growth
Heteroepitaxy of InAs quantum wells
- H. Munekata
- T.P. Smith III
- et al.
- 1989
- Journal of Crystal Growth
On the origin of RHEED intensity oscillations
- G.S. Petrich
- P.R. Pukite
- et al.
- 1989
- Journal of Crystal Growth
Compensation mechanisms in n+-GaAs doped with sulphur
- R. Venkatasubramanian
- S.K. Ghandhi
- et al.
- 1989
- Journal of Crystal Growth
Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs
- B. Lee
- S.S. Bose
- et al.
- 1989
- Journal of Crystal Growth
The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy
- T.F. Kuech
- G. Scilla
- et al.
- 1988
- Journal of Crystal Growth
Gas phase and surface reactions in Si doping of GaAs by silanes
- Harry K. Moffat
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
Deep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth