WNx Diodes on Plasma-Treated GaAs Surfaces
- A. Paccagnella
- A.C. Callegari
- et al.
- 1989
- IEEE T-ED
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72 results for Alessandro Callegari
Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs
- Yih-Cheng Shih
- A.C. Callegari
- et al.
- 1988
- Journal of Applied Physics
Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- Applied Physics Letters
IVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- IEEE T-ED
WSi0.11 Schottky gates for GaAs metal semiconductor field-effect transistors
- A.C. Callegari
- G.D. Spiers
- et al.
- 1987
- Journal of Applied Physics
Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs
- Yih-Cheng Shih
- Masanori Murakami
- et al.
- 1987
- Journal of Applied Physics
Characterization of GaAs self-aligned refractory-gate metal-semiconductor field-effect transistor (MESFET) integrated circuits
- J.H. Magerlein
- D.J. Webb
- et al.
- 1987
- Journal of Applied Physics
Effect of interface states on the electrical properties of W, WSi x, and WAlx Schottky contacts on GaAs
- A.C. Callegari
- D. Ralph
- et al.
- 1987
- Journal of Applied Physics
Electrical and thermal stability of AuGeNi ohmic contacts to GaAs fabricated with in situ RF sputter cleaning
- A.C. Callegari
- D. Lacey
- et al.
- 1986
- Solid-State Electronics
I-V characteristics of microwave-driven Josephson junctions in the low-frequency and high-damping regime
- C. Vanneste
- C.C. Chi
- et al.
- 1985
- Physical Review B