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PaperIIA-6 Sensitivity of Threshold Voltage and Sheet Carrier Concentration to Material and Electronic Parameters in a HEMT DeviceSandip TiwariIEEE T-ED
PaperIVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar TransistorsSandip Tiwari, David J. Frank, et al.IEEE T-ED
PaperEmpirical fit to band discontinuities and barrier heights in III-V alloy systemsSandip Tiwari, David J. FrankApplied Physics Letters
