PaperIIA-6 Sensitivity of Threshold Voltage and Sheet Carrier Concentration to Material and Electronic Parameters in a HEMT DeviceSandip TiwariIEEE T-ED
PaperIIIA-2 Simulation and Analysis of Recombination and Grading Effects in GaAlAs/GaAs HBT'sSandip Tiwari, David J. FrankIEEE T-ED
PaperThreshold and Sheet Concentration Sensitivity of High Electron Mobility TransistorsSandip TiwariIEEE T-ED
PaperOn the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectorsSandip Tiwari, Michael A. TischlerApplied Physics Letters