A.C. Callegari, P. Jamison, et al.
Journal of Applied Physics
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410°C for 57 h.
A.C. Callegari, P. Jamison, et al.
Journal of Applied Physics
D.A. Buchanan, E. Gusev, et al.
IEDM 2000
H.-C.W. Huang, P. Chaudhari, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
V. Narayanan, V.K. Paruchuri, et al.
VLSI Technology 2006