A.C. Callegari, E. Cartier, et al.
Journal of Applied Physics
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410°C for 57 h.
A.C. Callegari, E. Cartier, et al.
Journal of Applied Physics
K. Choi, H. Jagannathan, et al.
VLSI Technology 2009
M. Murakami, T.S. Kuan
Thin Solid Films
A. Paccagnella, A.C. Callegari, et al.
Applied Physics Letters