A.C. Callegari, D. Lacey, et al.
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Paper
Uniform and thermally stable AuGeNi ohmic contacts to GaAs
Abstract
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410°C for 57 h.
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