T.S. Kuan, M. Murakami
Metallurgical Transactions A
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410°C for 57 h.
T.S. Kuan, M. Murakami
Metallurgical Transactions A
B. Cartier, M. Steen, et al.
VLSI Technology 2009
A. Paccagnella, A.C. Callegari, et al.
Applied Physics Letters
C. Vanneste, C.C. Chi, et al.
Physical Review B