Organic transistors with low operating voltage and high mobility
- C. Dimitrakopoulos
- S. Purushothaman
- et al.
- 1999
- DRC 1999
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72 results for Alessandro Callegari
Thermal stability and electrical properties of hydrogenated amorphous carbon film
- A.C. Callegari
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
Improved process for high-Tc superconducting step-edge junctions
- J.Z. Sun
- W.J. Gallagher
- et al.
- 1993
- Applied Physics Letters
WNx Schottky diodes on plasma treated GaAs
- A. Paccagnella
- A.C. Callegari
- et al.
- 1991
- Journal of Applied Physics
Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
- A.C. Callegari
- D.K. Sadana
- et al.
- 1991
- Applied Physics Letters
GaAs surface plasma treatments for Schottky contacts
- A. Paccagnella
- A.C. Callegari
- 1991
- Solid State Electronics
Properties and thermal stability of the SiO2/GaAs interface with different surface treatments
- A. Paccagnella
- A.C. Callegari
- et al.
- 1990
- Applied Physics Letters
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
- A.C. Callegari
- P.D. Hoh
- et al.
- 1989
- Applied Physics Letters
Schottky diodes on hydrogen plasma treated n-GaAs surfaces
- A. Paccagnella
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
- M. Eizenberg
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters