Publication
ESSDERC 1990
Conference paper

Surface characteristics of plasma treated WNx/GaAs contacts from C-V measurements

Abstract

The density and the average penetration depth of acceptors near the semiconductor surface were calculated from C-V and J-V measurements on p+/n Shannon structures. The WNX/GaAs diodes were fabricated using chemically and plasma cleaned GaAs surfaces and annealed at several temperatures. It was found that the semiconductor surface cleaning before metal deposition is a key factor to control the rectifying properties of this type of metal/semiconductor contact.

Date

10 Sep 1990

Publication

ESSDERC 1990

Authors

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