WELL COUPLED dc SQUID WITH EXTREMELY LOW 1/F NOISE.
C.D. Tesche, K.H. Brown, et al.
International Conference on Low Temperature Physics (LT) 1983
The characteristics of Schottky diodes on n-GaAs fabricated after an in situ low-pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. Degraded rectifying characteristics result after room-temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160-240 °C. An increase in barrier height was also observed with increasing substrate temperature during plasma treatment. The contact properties are correlated to H diffusion in a surface layer of GaAs, which passivates the dopant atoms and defect sites.
C.D. Tesche, K.H. Brown, et al.
International Conference on Low Temperature Physics (LT) 1983
Maria Ronay, E.-E. Latta
Physical Review B
A.C. Callegari, K. Babich, et al.
ECS Meeting 2007
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987