Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
- S. Reboh
- R. Coquand
- et al.
- 2018
- Applied Physics Letters
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75 results for Juntao Li
Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- Shogo Mochizuki
- Conal E. Murray
- et al.
- 2017
- Journal of Applied Physics
SiO2 free HfO2 gate dielectrics by physical vapor deposition
- P. Jamison
- Takaaki Tsunoda
- et al.
- 2015
- IEEE T-ED
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James Kelly
- X. Lin
- et al.
- 2013
- JES
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES