Effect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques

Abstract

In addition to device scaling, strain engineering using SiC stressors in the S/D regions is important for nFET performance enhancement. In this paper, we review the characterization of fully-strained epitaxial SiC and in-situ doped SiC:P films for various ion implant conditions and anneals that are typically used in traditional CMOS flows. Full characterization has helped identify process integration schemes which give significant drive current enhancements. ©The Electrochemical Society.