Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Japanese Journal of Applied Physics
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A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Facts and Myths of Dielectric Breakdown Processes-Part II: Post-Breakdown and Variability
- Ernest Y. Wu
- 2019
- IEEE T-ED
Facts and Myths of Dielectric Breakdown Processes-Part I: Statistics, Experimental, and Physical Acceleration Models
- Ernest Y. Wu
- 2019
- IEEE T-ED
Recommended Methods to Study Resistive Switching Devices
- Mario Lanza
- H.-S. Philip Wong
- et al.
- 2018
- Advanced Electronic Materials
Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2017
- Journal of Applied Physics
Applications of clustering model to bimodal distributions for dielectric breakdown
- Ernest Y. Wu
- Ronald Bolam
- et al.
- 2017
- JVSTB
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
- Yanfeng Ji
- Chengbin Pan
- et al.
- 2016
- Applied Physics Letters
Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2013
- Applied Physics Letters
Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Suñé
- 2013
- Journal of Applied Physics