High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
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62 results for Ernest Y. Wu
Electrostatic discharge induced oxide breakdown characterization in a 0.1 μm CMOS technology
- A. Salman
- R. Gauthier
- et al.
- 2002
- IRPS 2002
Breakdown measurements of ultra-thin SiO2 at low voltage
- J.H. Stathis
- A. Vayshenker
- et al.
- 2000
- VLSI Technology 2000
Challenges for accurate reliability projections in the ultra-thin oxide regime
- E. Wu
- W.W. Abadeer
- et al.
- 1999
- IRPS 1999
Modeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- VLSI Technology 1997
A Unified TDDB Model for BEOL Dielectrics of Various Structures and Thick FEOL Dielectrics
- Kenji Okada
- Kei Date
- et al.
- 2024
- IEEE Transactions on Electron Devices
Reversing A Decades-Long Scaling Law of Dielectric Breakdown using Hydrogen-Plasma-Treated HfO2 ReRAM Devices
- Ernest Y. Wu
- Takashi Ando
- et al.
- 2023
- Advanced Electronic Materials
Mapping and statistical analysis of filaments locations in amorphous HfO2 ReRAM cells
- Franco Stellari
- Ernest Y. Wu
- et al.
- 2023
- Microelectronics Reliability
The Schottky emission effect: A critical examination of a century-old model
- Ernest Y. Wu
- Baozhen Li
- 2022
- Journal of Applied Physics
Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy
- Ernest Wu
- Franco Stellari
- et al.
- 2022
- Applied Physics Letters