High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Circuits 2015
Publications
109 results for Sebastian Engelmann
High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Technology 2015
Flip chip assembly with sub-micron 3D re-alignment via solder surface tension
- Jae Woong Nah
- Yves Martin
- et al.
- 2015
- ECTC 2015
Automated, self-aligned assembly of 12 fibers per nanophotonic chip with standard microelectronics assembly tooling
- Tymon Barwicz
- Nicolas Boyer
- et al.
- 2015
- ECTC 2015
Challenges of tailoring surface chemistry and plasma/surface interactions to advance atomic layer etching
- Sebastian U. Engelmann
- Robert L. Bruce
- et al.
- 2015
- ECS J. Solid State Sci. Technol.
Photonic packaging in high-throughput microelectronic assembly lines for cost-efficiency and scalability
- Tymon Barwicz
- Yoichi Taira
- et al.
- 2015
- OFC 2015
Optical demonstration of a compliant polymer interface between standard fibers and nanophotonic waveguides
- Tymon Barwicz
- Yoichi Taira
- et al.
- 2015
- OFC 2015
An o-band metamaterial converter interfacing standard optical fibers to silicon nanophotonic waveguides
- Tymon Barwicz
- Alexander Janta-Polczynski
- et al.
- 2015
- OFC 2015
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- IEDM 2014
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014