A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
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108 results for Sebastian Engelmann
Systematic studies on reactive ion etch-induced deformations of organic underlayers
- Martin Glodde
- Sebastian Engelmann
- et al.
- 2011
- SPIE Advanced Lithography 2011
Metallization opportunities and challenges for future back-end-of-the-line technology
- Cyril Cabral Jr.
- Benjamin Fletcher
- et al.
- 2010
- ADMETA 2010
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
- Sarunya Bangsaruntip
- A. Majumdar
- et al.
- 2010
- VLSI Technology 2010
Gate-all-around silicon nanowire MOSFETs and circuits
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- DRC 2010
Fabrication of dual damascene BEOL structures using a multi-level multiple exposure (MLME) scheme - Part 2. RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain
- Stefan Harrer
- John C Arnold
- et al.
- 2010
- Proceedings of SPIE - The International Society for Optical Engineering 2010
Fabrication of dual damascene BEOL structures using a Multi-Level Multiple Exposure (MLME) scheme - Part 1. Lithographic patterning
- Dario L. Goldfarb
- Stefan Harrer
- et al.
- 2010
- Proceedings of SPIE - The International Society for Optical Engineering 2010
High performance and highly uniform metal hi-k gate-all-around silicon nanowire mosfets
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- ECS Transactions
Etch and Patterning Development for 2nm Node Nanosheet Devices
- Eric Miller
- Indira Seshadri
- et al.
- 2022
- SPIE Advanced Lithography 2022
Plasma processing for advanced microelectronics beyond CMOS
- Nathan Marchack
- L. Buzi
- et al.
- 2021
- Journal of Applied Physics