Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
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149 results for John A. Ott
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs
- Stephen W. Bedell
- Amlan Majumdar
- et al.
- 2008
- IEEE Electron Device Letters
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
Electrical characterization of germanium p-channel MOSFETs
- H. Shang
- H. Okorn-Schimdt
- et al.
- 2003
- IEEE Electron Device Letters
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
Low-temperature growth of strained germanium quantum wells for high mobility applications
- Stephen W. Bedell
- S. Hart
- et al.
- 2020
- PRiME 2020