K.N. Tu
Materials Science and Engineering: A
So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals - erbium, lanthanum, and yttrium - are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation. © 2013 American Chemical Society.
K.N. Tu
Materials Science and Engineering: A
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SPIE Advanced Lithography 2008
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta