Dechao Guo, G. Karve, et al.
VLSI Technology 2016
A fracture-based layer transfer technique referred to as controlled spalling was used to separate a conventional InGaN/GaN multiple quantum well light-emitting diode (LED) structure from a 50mm sapphire wafer enabling the formation of vertical spalled LEDs (SLEDs). A 25-μm-thick tensile Ni layer was electrodeposited on the surface of the wafer, followed by the application of a polyimide tape layer. By mechanically guiding the tape layer, a 3-μm-thick layer of the LED epitaxy was removed. Transmission electron microscopy imaging indicated that spalling preserved the quality of the epitaxial layers, and electroluminescence verifies the operation of the SLED. © 2013 The Japan Society of Applied Physics.
Dechao Guo, G. Karve, et al.
VLSI Technology 2016
Davood Shahrjerdi, Stephen W. Bedell, et al.
Applied Physics Letters
Stephen W. Bedell, Keith Fogel, et al.
Journal of Physics D: Applied Physics
Martin M. Frank, Eduard A. Cartier, et al.
ECS Meeting 2012