ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Conference paper
Publications
60 results for Hemanth Jagannathan
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
Conference paperSub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
Conference paperOpportunities and challenges of FinFET as a device structure candidate for 14nm node CMOS technology
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- CSTIC 2011
Conference paperAggressively scaled strained-silicon-on-insulator undoped-body High-κ/Metal-Gate nFinFETs for high-performance logic applications
- Kingsuk Maitra
- Ali Khakifirooz
- et al.
- 2011
- IEEE Electron Device Letters
PaperMeasurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films
- Sufi Zafar
- Hemanth Jagannathan
- et al.
- 2011
- Applied Physics Letters
PaperHot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Conference paperA 0.063 μm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch
- Veeraraghvan S. Basker
- Theodorus E. Standaert
- et al.
- 2010
- VLSI Technology 2010
Conference paperExtraction of effective oxide thickness for SOI FINFETs with high-κ/Metal gates using the body effect
- Sujata Paul
- Frank Yeh
- et al.
- 2010
- IEEE Electron Device Letters
PaperMethodology of ALD HfO2 high-κ gate dielectric optimization by cyclic depositions and anneals
- H. Jagannathan
- Robert D. Clark
- et al.
- 2010
- ECS Transactions
Conference paper