Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
Conference paper
Publications
206 results for Vijay Narayanan
Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility
- Ruqiang Bao
- Brian Greene
- et al.
- 2015
- IEDM 2015
Conference paperSimple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond
- Takashi Ando
- B. Kannan
- et al.
- 2014
- VLSI Technology 2014
Conference paperTunable electrical properties of TaNx thin films grown by ionized physical vapor deposition
- Miri Choi
- Catherine Dubourdieu
- et al.
- 2014
- JVSTB
PaperStructural, optical, and electrical properties of strained La-doped SrTiO3 films
- Miri Choi
- Agham B. Posadas
- et al.
- 2014
- Journal of Applied Physics
PaperIncorporation of la in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates
- Martin D. McDaniel
- Agham Posadas
- et al.
- 2014
- Journal of Applied Physics
PaperProcess dependence of AC/DC PBTI in HKMG n-MOSFETs
- Wen Liu
- Giuseppe La Rosa
- et al.
- 2014
- IRPS 2014
Conference paperGate stacks for silicon, silicon germanium, and III-V channel MOSFETs
- Martin M. Frank
- Yu Zhu
- et al.
- 2014
- ECS Meeting 2014
Conference paperThe quantum metal ferroelectric field-effect transistor
- David J. Frank
- Paul M. Solomon
- et al.
- 2014
- IEEE T-ED
Paper2nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond
- C. Ortolland
- Daniel Jaeger
- et al.
- 2013
- IEDM 2013
Conference paper