A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
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62 results for Andrew Simon
Copper dual damascene wiring for sub-0.25 μm CMOS technology
- J. Heidenreich
- D. Edelstein
- et al.
- 1998
- IITC 1998
Design of projected phase-change memory mushroom cells for low-resistance drift
- Timothy M. Philip
- Kevin W. Brew
- et al.
- 2022
- MRS Bulletin
Role of high aspect-ratio thin-film metal deposition in Cu back-end-of-line technology
- Andrew Simon
- O. Van Der Straten
- et al.
- 2020
- JVSTA
Non-Contact, Sub-Surface Detection of Alloy Segregation in Back-End of Line Copper Dual-Damascene Structures
- Joyeeta Nag
- S. Ray
- et al.
- 2015
- IEEE Trans Semicond Manuf
Electromigration in Cu(Al) and Cu(Mn) damascene lines
- C.-K. Hu
- J. Ohm
- et al.
- 2012
- Journal of Applied Physics
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Effects of contact area on mechanical strength, electrical resistance, and electromigration reliability of Cu/Low- k interconnects
- C.-C. Yang
- T.M. Shaw
- et al.
- 2010
- Electrochemical and Solid-State Letters
Comparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- JES
Effect of metal liner on electromigration in Cu Damascene lines
- C.-K. Hu
- L. Gignac
- et al.
- 2005
- Journal of Applied Physics