L. Gignac, T.M. Parrill, et al.
Thin Solid Films
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
L. Gignac, T.M. Parrill, et al.
Thin Solid Films
Soon-Cheon Seo, C.-C. Yang, et al.
Electrochemical and Solid-State Letters
C.-K. Hu, B. Luther, et al.
Thin Solid Films
J.M.E. Harper, C. Cabral Jr., et al.
MRS Spring Meeting 1999