Guangyong Xu, X. Su, et al.
Applied Physics Letters
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
Guangyong Xu, X. Su, et al.
Applied Physics Letters
J.R. Lloyd, C.E. Murray, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2005
C.-K. Hu, L. Gignac, et al.
JES
K.P. Rodbell, L. Gignac, et al.
Journal of Applied Physics