Atomic hydrogen-induced degradation of the Si SiO2 structure
- E. Cartier
- J.H. Stathis
- 1995
- Microelectronic Engineering
Publications
169 results for Jim Stathis
Dissociation kinetics of hydrogen-passivated (100) Si SiO2 interface defects
- 1995
- Microelectronic Engineering
Atomic hydrogen-induced degradation of thin SiO2 gate oxides
- E. Cartier
- D.A. Buchanan
- et al.
- 1995
- Journal of Non-Crystalline Solids
Degradation of thin SiO 2 gate oxides by atomic hydrogen
- F. Cartier
- D.J. DiMaria
- et al.
- 1994
- DRC 1994
Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface
- J.H. Stathis
- E. Cartier
- 1994
- Physical Review Letters
Interface defects of ultrathin rapid-thermal oxide on silicon
- J.H. Stathis
- D.A. Buchanan
- et al.
- 1993
- Applied Physics Letters
Passivation and depassivation of silicon dangling bonds at the Si/SiO 2 interface by atomic hydrogen
- E. Cartier
- J.H. Stathis
- et al.
- 1993
- Applied Physics Letters
New model of a common origin for trapped holes and anomalous positive charge in MOS capacitors
- Y. Roh
- L.P. Trombetta
- et al.
- 1993
- Microelectronic Engineering
Microscopic mechanisms of interface state generation by electrical stress
- 1993
- Microelectronic Engineering
Luminescence degradation in porous silicon
- M.A. Tischler
- R.T. Collins
- et al.
- 1992
- Applied Physics Letters