C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
We cite evidence from electrical and EPR measurements on MOS capacitors as well as radiation damage experiments by other investigators to argue that anomalous positive charge (APC) in MOS devices results from an interaction of hydrogen with a trapped hole. The model is a modification of that used to explain the generation of radiation-induced interface states and envisions the production of H+ ions which drift toward the Si-SiO2 interface to form APC. © 1993.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications