Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface

Abstract

We have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by atomic hydrogen, depending on the starting density. However, the two defects possess quantitative differences in behavior. The Pb0 center can be produced more readily than Pb1 and it is also much harder to passivate by atomic hydrogen. These differences between Pb0 and Pb1 help to explain previous observations of Pb0 center generation by radiation and by electrical stress. © 1994 The American Physical Society.