A. Krol, C.J. Sher, et al.
Surface Science
Interface state generation by hot electrons is studied using spin-dependent recombination. Hot electrons with average energy {most positive}2eV produce a paramagnetic recombination center, while hole annihilation at the Si/SiO2 interface does not produce this defect. The implications of these results for microscopic models of interface defect creation are discussed. © 1993.
A. Krol, C.J. Sher, et al.
Surface Science
Michiel Sprik
Journal of Physics Condensed Matter
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting