Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
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21 results for E.C. Jones
Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Electrical characterization of germanium p-channel MOSFETs
- H. Shang
- H. Okorn-Schimdt
- et al.
- 2003
- IEEE Electron Device Letters
Recent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
Doping challenges in exploratory devices for high performance logic
- Erin C. Jones
- 2002
- IIT 2002
Silicon self-interstitial cluster formation and dissolution in SOI
- A.F. Saavedra
- J. Frazer
- et al.
- 2002
- MRS Proceedings 2002
Characterization and monitoring of silicon-on-insulator fabrication processes by high-resolution x-ray diffraction
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- MRS Proceedings 2002
High performance double-gate device technology challenges and opportunities
- M. Ieong
- H.-S. Wong
- et al.
- 2002
- ISQED 2002