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Publication
VLSI-TSA 2003
Conference paper
Recent progress in devices and materials for CMOS technology
Abstract
This paper reviews the recent progress in continuing CMOS scaling by introducing new device structures and new materials. Starting from an analysis of the sources of device performance improvements, we present technology options to achieving these performance enhancements. These options include high dielectric constant (high-k) gate dielectric, metal gate electrode, double-gate FET, strained silicon FET, and Ge FET.