High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes

Abstract

The use of high-resolution x-ray diffraction (HRXRD) in monitoring the fabrication process of silicon-on-insulator (SOI) device was presented. The nondestructive HRXRD technique was used in characterizing the critical processes for complementary metal oxide semiconductor (CMOS) device fabrication on SOI. Simulation of the x-ray diffracted data provided the information about the thickness change in SOI film due to device fabrication, ion implantation and the strain distribution in the film. Its application in the multilayered bonded SOI substrates was also presented.