Electrical activation in silicon-on-insulator after low energy boron implantation

Abstract

The electrical activation of implanted boron in silicon-on-insulator (SOI) material was investigated using Hall effect and secondary ion mass spectrometry. A low activation of boron was observed in SOI at temperatures below 750°C. The fractional activation in thin SOI was found to be increasing with a decrease in the implant energy, which was due to the reduction in boron interstitial clusters in the Si layer surface. The low activation observed in SOI was attributed to the increase in the boron interstitial clusters which cause interstitial supersaturation within the Si layer surface.