S. Engelmann, R. Bruce, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surface modifications of silicon induced by electron cyclotron resonance (ECR) etching with CF4 is studied using x-ray photoemission spectroscopy and Raman scattering techniques. It is shown that a silicon sample etched by ECR exhibits a thinner surface residual layer compared to those exposed to reactive ion etching (RIE) or hybrid ECR/RIE. Evidence of plasma-induced structural disorder in the silicon surface was only observed in the RIE-etched sample.
S. Engelmann, R. Bruce, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
B.E. Kastenmeier, G.S. Oehrlein, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
S. Voldman, R. Schulz, et al.
Journal of Electrostatics
G. Fortuño-Wiltshire, G.S. Oehrlein
JES