Publication
Applied Physics Letters
Paper

Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration

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Abstract

The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germanium concentration was obtained from Rutherford backscattering. These index values are used to invert the ellipsometry equations. Using this principle, the Ge concentration depth profile of an unknown SiGe structure can be determined from an in situ ellipsometry measurement sequence that is taken while the unknown sample is being etched.

Date

01 Dec 1992

Publication

Applied Physics Letters

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