Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Bilayer thin film imaging was shown to overcome limitations of conventional deep-UV single layer resist lithography, demonstrating sub 150 nm features. The O2-based transfer etch step is critical in the final image development, wherein the developed Si-containing imaging layer resist acts as a hard mask for pattern transfer into the thicker underlayer. The slow etching rate obtained and the lack of deprotection upon plasma exposure enables the use of thin imaging layer films. Pattern transfer enhancement with imaging resists with higher Si content was also demonstrated.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
T. Schneider, E. Stoll
Physical Review B
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021