Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
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43 results for D. Medeiros
Hybrid field-effect transistor based on a low-temperature melt-processed channel layer
- D.B. Mitzi
- C. Dimitrakopoulos
- et al.
- 2002
- Advanced Materials
Graded spin-on organic bottom antireflective coating for high NA lithography
- Dario L. Goldfarb
- Sean D. Burns
- et al.
- 2008
- SPIE Advanced Lithography 2008
32 NM Logic patterning options with immersion lithography
- K. Lai
- S. Burns
- et al.
- 2008
- SPIE Advanced Lithography 2008
Silicon containing polymer in applications for 193 nm high NA lithography processes
- Scan Bums
- Dirk Pfeiffer
- et al.
- 2006
- SPIE Advanced Lithography 2006
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
Studies of acid diffusion in low Ea chemically amplified photoresists
- G.M. Wallraff
- D. Medeiros
- et al.
- 2005
- Microlithography 2005
Sub-50 nm half-pitch imaging with a low activation energy chemically amplified photoresist
- G.M. Wallraff
- D. Medeiros
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IBM-JSR 193nm negative tone resist: Polymer design, material properties, and lithographic performance
- Kaushal Patel
- Margaret Lawson
- et al.
- 2004
- Microlithography 2004