Conference paper
Breakdown transients in ultra-thin gate oxynitrides
S. Lombarde, F. Palumbo, et al.
ICICDT 2004
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
S. Lombarde, F. Palumbo, et al.
ICICDT 2004
L. Dori, J.H. Stathis, et al.
Journal of Applied Physics
K. Choi, H. Jagannathan, et al.
VLSI Technology 2009
R.D. Clark, S. Consiglio, et al.
ECS Meeting 2008