J.H. Stathis, M. Wang, et al.
Microelectronics Reliability
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
J.H. Stathis, M. Wang, et al.
Microelectronics Reliability
J.H. Stathis
MIEL 2006
J.H. Stathis, S. Zafar
Microelectronics Reliability
J.H. Stathis, D.J. DiMaria
IEDM 1998