R.P. Robertazzi, D.C. Worledge, et al.
Applied Physics Letters
Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, V c 50 ns = 290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model. © 2011 American Institute of Physics.
R.P. Robertazzi, D.C. Worledge, et al.
Applied Physics Letters
Jerry M. Chow, Jay M. Gambetta, et al.
Nature Communications
Eugene J. O'Sullivan, Martin J. Gajek, et al.
ECS Transactions
D.C. Worledge, G. Hu, et al.
Journal of Applied Physics