IEDM 2022
Conference paper

Double spin-torque magnetic tunnel junction devices for last-level cache applications


We experimentally demonstrate reliable 300 ps switching in arrays of 35 nm double spin-torque magnetic tunnel junctions (DS-MTJs) and also demonstrate a new free-layer design with improved activation energy and magnetoresistance. We establish a new method to characterize the DS-MTJ devices, by introducing and experimentally verifying a simple device-physics model.