Tenko Yamashita, Veeraraghvan S. Basker, et al.
VLSI Technology 2011
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼10 4.
Tenko Yamashita, Veeraraghvan S. Basker, et al.
VLSI Technology 2011
K.L. Lee, J.O. Chu, et al.
IEDM 2002
K.-L. Lee, M.M. Frank, et al.
VLSI Technology 2006
Huiling Shang, Harald Okorn-Schmidt, et al.
IEDM 2002