John Ellis-Monaghan, Kam-Leung Lee, et al.
ESSDERC 2001
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼10 4.
John Ellis-Monaghan, Kam-Leung Lee, et al.
ESSDERC 2001
M. Yang, K.K. Chan, et al.
VLSI Technology 2006
R. Jammy, V. Narayanan, et al.
ISTC 2005
K. Cheng, A. Khakifirooz, et al.
VLSI Technology 2009