D. Kazazis, A. Zaslavsky, et al.
ISTDM 2006
GaN microcolumns were grown on Si/SiO2 wafers by selective-area metallorganic molecular beam epitaxy. Scanning electron microscopy (SEM) at low and high magnifications showed the morphology of the selective area growths in a stripe and at the stripe edge, respectively. SEM also provided a near cross section and hexagonal cross section plan view of the microcolumns. Cathodoluminescence spectroscopy provided images of the microcolumns in panchromatic mode, using 365 nm luminescence, and using 570 nm luminescence.
D. Kazazis, A. Zaslavsky, et al.
ISTDM 2006
E.J. Preisler, S. Guha
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
S. Guha, N.A. Bojarczuk
Electronics Letters
L.Å. Ragnarsson, S. Guha, et al.
Applied Physics Letters