K.-L. Lee, M.M. Frank, et al.
VLSI Technology 2006
Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films of thicknesses down to 2 nm, grown on n -type and p -type silicon wafers, using the oxidation of isopropanol as a model system. Direct in vacuo mass spectrometry measurements were performed under irradiation above the TiO 2 bandgap. We present a model consistent with our experimental results, which indicate that only near-surface electron-hole pair generation is relevant and that the reaction rate can be controlled by varying the substrate Fermi level in going from n -type to p -type silicon, by approximately a factor of 2. © 2009 American Institute of Physics.
K.-L. Lee, M.M. Frank, et al.
VLSI Technology 2006
S. Guha, E. Gusev, et al.
Applied Physics Letters
E.J. Preisler, N.A. Bojarczuk, et al.
MRS Proceedings 2003
L.Å. Ragnarsson, N.A. Bojarczuk, et al.
IEEE Electron Device Letters