Breakdown transients in ultra-thin gate oxynitrides
S. Lombarde, F. Palumbo, et al.
ICICDT 2004
The performance of aggressively scaled (4 nm < Tinv < 2.1 nm) self-aligned HfO2-based nMOSFETs with various metal gate electrodes (W, TaN, TiN, and TaSiN) is optimized. It is shown that high mobility values, competitive with oxynitride controls (SiON/poly-Si, Tinv ∼ 1.8 - 2.1 nm), can be achieved. Detailed studies of the role of interface states, remote charges in the HfO2 layer, interfacial layer regrowth, and nitrogen-induced charge lead to the conclusion that high-temperature-induced structural modifications near the SiO2/HfO2 interface substantially improve the electron mobility. © 2006 IEEE.
S. Lombarde, F. Palumbo, et al.
ICICDT 2004
P. Jamison, M. Copel, et al.
MRS Spring Meeting 2006
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
R. Jammy, V. Narayanan, et al.
ISTC 2005