Microelectronics Reliability
Conference paper

Analysis of the effect of the gate oxide breakdown on SRAM stability

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We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50jiA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on rc-FET width. This approach gives targets for tolerable values of leakage caused by gate oxide breakdown. © 2002 Elsevier Science Ltd. All rights reserved.