In this paper, we have demonstrated a plasma activated low-temperature die-level oxide-oxide direct bonding with advanced wafer dicing technologies. This evaluation used blanket 300-mm silicon wafers. 1 μm Tetraethyl orthosilicate (TEOS) oxide was deposited by plasma-enhanced chemical vapor deposition (PECVD) directly on the Si wafer surface, followed by chemical mechanical planarization (CMP). Atomic Force Microscopy (AFM) was used to examine the roughness of the wafer surface before dicing and it showed < 0.38 nm RMS and < 0.30 nm Ra. Several dicing technologies such as diamond blade dicing, step dicing, bevel dicing, and stealth dicing were evaluated for this integration scheme. In the end, diamond blade dicing has the most compatibility with many materials, but it led to large chipping. An edge chipping of less than 2 μm was achieved by stealth dicing, from the study, shows the least amount of damage among all dicing methods tested. In the bonding test, the 10 mm square silicon die was bonded to a 35-mm square silicon substrate. Both silicon die and substrate are of thickness 760 μm. Prior to direct oxide-oxide bonding, both silicon die, and substrate went through a two-step cleaning process. The detailed process of the plasma activated die-level direct bonding is presented.