VLSI Technology 2007
Conference paper

Novel lithography-independent pore phase change memory

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We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformai deposition. Fully integrated 256kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less than 250μA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically-defined diameter.