On the dynamic resistance and reliability of phase change memory

Abstract

A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (Rd) is inversely related to the programming current (I), as Rd = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation. © 2008 IEEE.